Optimizing Free Carrier Absorption Measurements for Power Devices by Physically Rigorous Simulation
نویسندگان
چکیده
The carrier distribution in the interior of power devices can be determined from free carrier absorption measurements. In this work, a physically rigorous simulation of the entire measurement process is performed to investigate the effects which arise from the wave propagation of the probing beam and the sample preparation. Quantitative results for the optimization of the optical setup and the sample geometries which miminize the unavoidable experimental errors are presented.
منابع مشابه
Internal Laser Probing Techniques for Power Devices: Analysis, Modeling, and Simulation
In this thesis, a physically rigorous model for the simulation of internal laser probing techniques for semiconductor power devices is developed which is employed for a thorough analysis of the physical effects during the measurement process. The theoretical studies provide valuable information for developing and optimizing powerful probing techniques which facilitate space–resolved and time–re...
متن کاملA Novel Design of Quaternary Inverter Gate Based on GNRFET
This paper presents a novel design of quaternary logic gates using graphene nanoribbon field effect transistors (GNRFETs). GNRFETs are the alternative devices for digital circuit design due to their superior carrier-transport properties and potential for large-scale processing. In addition, Multiple-valued logic (MVL) is a promising alternative to the conventional binary logic design. Sa...
متن کاملNumerical Simulation of Infrared Laser Probing Techniques
Exploiting the dependence of the refractive index on carrier concentration and temperature, various infrared laser probing techniques enable the experimental analysis of the carrier and heat flow distributions in the interior of semiconductor devices. In this work we present a complete numerical simulation sequence for the whole measurement process. It includes the electrothermal device simulat...
متن کاملEnergy harvesting in silicon wavelength converters.
Nonlinear loss is the central problem in silicon devices that operate using nonlinear optical effects. Wavelength converters are one example of such devices, wherein high optical intensities required for nonlinear interactions cause two-photon absorption and severe free-carrier absorption. In this paper, we report the first demonstration of nonlinear photovoltaic effect in silicon wavelength co...
متن کاملRigorous thermodynamic treatment of heat generation and conduction in semiconductor device modeling
The influence of self-heating by power dissipation on the operation of semiconductor devices proves to be important not only in the area of power electronics, but also for VLSI devices. Hence, besides the carrier densities (or quasi-Fermi potentials, alternatively), temperature has to be included as additional dynamic state variable in the simulation of the electric and thermal behavior of such...
متن کامل